SB2D thru sb2m www.vishay.com vishay general semiconductor revision: 03-nov-11 1 document number: 89461 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount glass passivated rectifier features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? low forward voltage drop ? low leakage current ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes for consumer and telecommunication. mechanical data case: do-214aa (smb) ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end note (1) mounted on 8 mm x 8 mm pad areas, 1 oz. fr4 pcb primary characteristics i f(av) 2.0 a v rrm 200 v to 1000 v i fsm 55 a i r 1.0 a v f at i f = 2.0 a 0.86 v t j max. 150 c package do-214aa (smb) diode variatio ns single die do-214aa ( s mb) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol SB2D sb2g sb2j sb2k sb2m unit device marking code b2d b2g b2j b2k b2m maximum repetitive peak reverse voltage v rrm 200 400 600 800 1000 v maximum dc forward current (fig. 1) i f (1) 2.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 55 a operating and storage temperature range t j , t stg -55 to +150 c
SB2D thru sb2m www.vishay.com vishay general semiconductor revision: 03-nov-11 2 document number: 89461 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width, ? 40 ms note (1) units mounted on pcb with 8.0 mm x 8.0 mm copper pad areas, 1 oz. fr4 pcb; r ? ja - junction to ambient r ? jm - junction to mount ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 1.0 a t a = 25 c v f (1) 0.90 - v i f = 2.0 a 0.96 1.15 i f = 1.0 a t a = 125 c 0.78 - i f = 2.0 a 0.86 1.05 reverse current rated v r t a = 25 c i r (2) 0.15 1.0 a t a = 125 c 36 125 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, ? i rr = 0.25 a t rr 2.0 s typical junction capacitance rated v r = 4.0 v, 1 mhz c j 16 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol SB2D sb2g sb2j sb2k sb2m unit typical thermal resistance r ? ja (1) 70 c/w r ? jm (1) 10 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode sb2j-m3/52t 0.096 52t 750 7" diameter plastic tape and reel sb2j-m3/5bt 0.096 5bt 3200 13" diameter plastic tape and reel 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 25 50 75 100 125 150 175 dc forward current (a) ambient temperature (c) 0.8 1.2 1.6 2.0 2.4 rage power lo ss (w) 0 0.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 aver average forward current (a) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0
SB2D thru sb2m www.vishay.com vishay general semiconductor revision: 03-nov-11 3 document number: 89461 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) 0.1 1 10 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 t a = 150 c t a = 125 c t a = 75 c t a = 25 c 0.01 0.1 1 10 100 1000 t a = 150 c t a = 125 c t a = 25 c t a = 75 c instantaneo u s re v erse c u rrent (a) percent of rated peak re v erse v oltage (%) 10 20 30 40 50 60 70 80 90 100 1 10 100 0.1 1 10 100 j u nction capacitance (pf) re v erse v oltage ( v ) t j = 25 c f = 1.0 mhz v s t g = 50 mv p-p 10 100 1 0.01 1 100 0.1 10 t - p u lse d u ration (s) transient thermal impedance (c/w) cathode band do-214aa ( s mb) 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) mountin g pa d layout 0.086 (2.18) min. 0.060 (1.52) min. 0.085 (2.159) max. 0.220 (5.59) ref.
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